An 8 – 18 GHz Wideband SiGe BiCMOS Low Noise Amplifier
نویسندگان
چکیده
In this paper, an 8 – 18 GHz wideband low noise amplifier (LNA) with an active balun fabricated in a 0.13-μm SiGe BiCMOS technology was presented. The LNA achieves 16dB of gain with 1.5 dB variation over the 8GHz to 18 GHz frequency band and a matched input with less than -9 dB of reflection. The minimum noise figure (NF) is 5 dB at 8GHz and increases to 6 dB at 18GHz. The measured IIP3 is -15-dBm with 17 mA total current consumption from 2.2V supply. Index Terms — Low noise amplifier, resistive feedback, wideband, SiGe, BiCMOS, linearity, X-band, Ku-band, active balun.
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